Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

•Deposition of boron doped diamond layer on (110) oriented single crystal substrates•Electrical properties of p type (110) diamond epitaxial layers•Electrical properties of p-type diamond layer as a function of substrate's orientation

Boron doped diamond layers have been grown on (110) single crystal diamond substrates with B/C ratios up to 20 ppm in the gas phase. The surface of the diamond layers observed by scanning electron microscopy consists of (100) and (113) micro-facets. Fourier Transform Photocurrent Spectroscopy indicates substitutional boron incorporation. Electrical properties were measured using Hall effect from 150 to 1000 K. Secondary ion mass spectrometry analyses are consistent with the high incorporation of boron determined by electrical measurements. A maximum mobility of 528 cm2 V− 1 s− 1 was measured at room temperature for a charge carrier concentration of 1.1 1013 cm− 3. Finally, properties of boron doped (110) diamond layers are compared with layers on (100) and (111) orientated substrates.