| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 701921 | Diamond and Related Materials | 2011 | 7 Pages |
Abstract
The commercialization of gallium-nitride microwave circuits on diamond substrates requires chip-dicing technology and via formation process compatible with standard semiconductor processes. This paper discusses issues related to dicing and drilling of GaN-on-diamond wafers for RF power transistor applications (die size < 1 mm2) using laser micromachining.
Research highlights► Via formation and wafer scribing using laser machining of GaN-on-diamond wafers. ► Investigation of debris-free diamond wafer laser cutting. ► Laser machining of diamond in oxygen overpressure. ► Cleaving of laser-scribed GaN-on-diamond wafers into discrete AlGaN/GaN HEMT chips.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Dubravko I. Babić, Quentin Diduck, Firooz Faili, John Wasserbauer, Frank Lowe, Daniel Francis, Felix Ejeckam,