| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 702023 | Diamond and Related Materials | 2011 | 4 Pages |
Abstract
Methyl-BCN film as a low dielectric material has been investigated by our group for Cu/low-k interconnection. We studied the ashing characteristics of Methyl-BCN films using oxygen plasma. As a contrast, porous-SiOCH films were also treated by oxygen plasma with the same conditions. The change of composition ratio of Methyl-BCN film is less than that of porous-SiOCH film after oxygen plasma treatment. There is no evident change in each bond of Methyl-BCN film after treatment, either. FT-IR analysis was carried out to investigate the chemical bonds of Methyl-BCN films and porous-SiOCH films with and without oxygen plasma treatment. The methyl groups of Methyl-BCN film were more stable than that of porous-SiOCH film.
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Authors
Zhiming Lu, Makoto Hara, Takuro Masuzumi, Makoto Nishizaki, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino,