| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 702174 | Diamond and Related Materials | 2008 | 4 Pages |
Abstract
We used a recently developed tool based on the quantitative H/D exchange between gaseous D2O and a solid material, to tentatively estimate the fraction of the β-SiC carbide surface covered by oxygenated phases and that remaining a pure oxygen-free carbide.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Nicolas Keller, François Di Grégorio, Cuong Pham-Huu, Valérie Keller,