Article ID Journal Published Year Pages File Type
702224 Diamond and Related Materials 2013 5 Pages PDF
Abstract

We studied the growth of graphene by molecular beam epitaxy (MBE) using ethylene and evaluated the MBE-grown graphene. The flow rate dependence of the carbon deposition rate in the ethylene MBE indicated a gradual decrease of the deposition rate with increasing flow rate. This is an improvement from that deposition rate with ethanol, which abruptly decreases because of an etching effect. This feature of ethylene enhances the condition for the growth of the high-quality graphene. Raman spectroscopy measurement and atomic force microscopy observation show that the quality of graphene grown using ethylene is improved from that grown using ethanol from the viewpoints of a domain size and crystallinity. These results demonstrate the advantages of ethylene over ethanol in the MBE growth of graphene.

► High-temperature cracking enables us to use ethylene as a source gas for MBE growth. ► Use of ethylene instead of ethanol improves flow-rate dependence of MBE. ► Graphene domain size grown using ethylene is larger than that grown using ethanol. ► Ethylene has the advantage over ethanol in the MBE growth of graphene.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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