Ferromagnetic Schottky junctions using diamond semiconductors

Schottky junctions, formed using various ferromagnetic metals and alloys, were fabricated on hydrogen-terminated (H-terminated) diamond, and their interfacial characteristics were evaluated. A clear work function dependence of the Schottky barrier height (ϕB) was obtained for these junctions, indicating that the Schottky barrier height between H-terminated diamond and ferromagnetic metals can be controlled by selecting metals with appropriate work functions. ϕB for Ni and NiFe, which have higher work functions above 5 eV, is lower than ϕB for other ferromagnetic metals. These results indicate that ferromagnetic metals with higher work function are promising for spin injection into diamond semiconductors.

► We fabricated ferromagnetic Schottky junctions using diamond semiconductors. ► We examined Schottky barrier heights between magnetic metals and H-terminated diamond. ► We showed ferromagnetic metals with higher work function are promising spin sources.