Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model

The paper presents a large-signal nonlinear circuit-oriented model for polycrystalline and single-crystal H-terminated diamond MESFETs implemented within the Agilent ADS design suite. The DC characteristics of such devices suggest that the channel free charge control law may be modeled using the same strategy adopted for III-V HEMTs. For this reason, the well-known nonlinear Chalmers (Angelov) circuit model was chosen as the starting point for the development of the present non-linear diamond MESFET model. Model fitting was performed against DC and multibias small signal measurements, with good agreement. Model validations versus large-signal (power) measurements point out the accuracy of the proposed approach to simulate the behavior of H-terminated diamond MESFETs under large-signal operation.

► Circuit-oriented model of surface-channel diamond FETs presented for the first time. ► Nonlinear equivalent circuit based on the III-V HEMTs Chalmers approach. ► Model validated under power operation against RF power measurements. ► Application to polycrystalline and single-crystal diamond FET technologies described.