Carbon nanotubes/SiC whiskers composite prepared by CVD method

Selective growth of carbon nanotubes (CNTs) on silicon carbide (SiC) substrate will create some new applications in composites and electronic devices by combining their mechanical and physical properties. Multi-walled CNTs were successfully grown on SiC whiskers using a conventional xylene–ferrocene chemical vapor deposition process. A thin oxide layer was created on the surface of the SiC whiskers by high-temperature annealing in air before CNT growth. The effect of catalyst morphology and chemistry on the growth of CNTs was analyzed. Our technique may be further applied to the controlled growth of CNTs on any other SiC substrates.