Synthesis and photoluminescent property of AlN nanobelt array

An AlN nanobelt array has been synthesized on Si substrate by an oxide-assisted vapor transport and condensation method at 900 °C. The nanobelts are 1–3 μm in length, 20–150 nm in width, and the ratio of width to thickness is in the range of 2–5. The nanobelts are single-crystalline hexagonal wurtzite AlN with [001] growth direction. The growth mechanism and photoluminescent property of the AlN nanobelt array were discussed.