Electronic properties of H-terminated diamond during NO2 and O3 adsorption and desorption

We investigated hole sheet concentration and mobility during NO2 or O3 adsorption/desorption on H-terminated diamond surface with a hole sheet concentration (ps) of ~ 1 × 1014 cm− 2. During NO2 adsorption, ps first increased with time and eventually saturated. When the NO2 gas concentration increased in a range of < 300 ppm, the saturated value of ps increased. However, in the range of > 300 ppm, the values were the same, and we therefore determined that the high limit of ps is ~ 9 × 1013 cm− 2 for (001) orientation. Further, we found that during the NO2 adsorption process hole mobility (μ) stays constant, while ps is increasing. We propose a NO2 adsorption/desorption and hole-generation model to explain these experimental results.

►We investigated hole sheet concentration (ps) and mobility on H-terminated diamond surface. ►The investigation performed during NO2 or O3 adsorption/desorption. ►We determined that the high limit of ps is ~ 9 × 1013 cm− 2 for (001) orientation. ►We propose a NO2 adsorption/desorption and hole-generation model.