| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 702444 | Diamond and Related Materials | 2012 | 5 Pages |
Diamond is a promising material for future high power devices due to high breakdown field, low dielectric constant and high carrier mobility, respectively. From one-dimensional device model, 90% reduction of the power loss is expected by using diamond Schottky barrier diode instead of SiC diode for high temperature power device applications. The high breakdown field of more than 3 MV/cm has been realized by utilizing high Schottky barrier height. The diodes show low leakage current and low on-resistance even at high temperature conditions.
► Diamond SBDs have been evaluated for high-temperature and high-power applications. ► Using diamond instead of SiC for SBDs, a 90% reduction in power loss is expected. ► A stability of Ru SBDs at 400 oC has been confirmed after 1500 h. ► High SBH realizes low leakage current at high field even at high temperature.
