Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
702510 | Diamond and Related Materials | 2014 | 4 Pages |
Abstract
Generation and recombination processes of electrons through phosphorus (P) donor are analyzed by admittance spectroscopy for a Ni/Au Schottky contact on an n-diamond epilayer. The dependence of capacitance and conductance frequency on temperature is interpreted by Shockley–Read–Hall statistics. The thermal ionization energy and capture cross-section of P donor are evaluated to be 0.54 ± 0.02 eV and (4.5 ± 2.0) × 10− 17 cm2, respectively. Broadening of the conductance–frequency curve is observed, which is believed to be evidence of a long Debye tail of electron distribution at the depletion layer edge.
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Authors
Yasuo Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, T. Sakai,