| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 702513 | Diamond and Related Materials | 2005 | 4 Pages |
Abstract
The deuterium (hydrogen) passivation effect on acceptors in boron-doped CVD homoepitaxial diamond was studied by electrical (Hall-effect) and secondary ion mass spectroscopy (SIMS) measurements. Deuterium was incorporated into the samples using microwave (MW) deuterium plasma at 673 K for 2–24 h. We observed the progress of acceptor passivation with p-type conduction, which finally resulted in a highly resistive state.
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Authors
Masahiko Ogura, Norikazu Mizuochi, Satoshi Yamasaki, Hideyo Okushi,