The effects on the field emission properties of silicon nanowires by different pre-treatment techniques of Ni catalysts layers

Silicon nanowires (SiNWs) were synthesized directly from silicon substrates via a catalytic reaction by thermal CVD system. Ni catalyst layers were deposited on silicon substrates by RF sputtering and electroless-plating pre-treatment techniques, respectively. It was found that the average diameters, lengths, and growth densities of SiNWs by the RF sputtering pre-treatment technique was larger than that by the electroless-plating pre-treatment technique. Furthermore, a better and more stable emission property of the SiNWs was also observed by the RF sputtering pre-treatment technique. Therefore, it was then concluded that the growth mechanism and the emission properties were both strongly influenced by the Ni catalyst layers of different pre-treatment techniques.