Pt-implanted boron-doped diamond electrodes and the application for electrochemical detection of hydrogen peroxide

Pt-modified diamond electrodes were fabricated for electroanalytical applications by implantation method at 750 keV Pt2+ with a dose of 5 × 1014 cm− 2. The electrochemical behavior has been studied for oxidation of hydrogen peroxide by using cyclic voltammetry and flow injection analysis in phosphate buffer solution (pH 7). The electrode exhibited high catalytic activity and excellent electrochemical stability with a very low background current in comparison to Pt metal electrode. Very low limit of detection, 30 nM (S / N = 3), were examined with RSD of 2.91% (n = 20). These results indicate that metal-implanted method could be a promising method for controlling the electrochemical properties of diamond electrodes.