Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
702572 | Diamond and Related Materials | 2011 | 5 Pages |
Boron incorporation from the gas phase was achieved in MPCVD grown (100)-oriented homoepitaxial diamond layers, either with or without a small fraction of oxygen in the gas phase, in addition to hydrogen, methane and diborane. From secondary Ion Mass Spectroscopy (SIMS), it is shown that the 0.25% of oxygen decreases the Boron concentration [B] by two orders of magnitude. In this way, we demonstrate that it becomes possible to control [B] with low levels of compensation and passivation down to the 1015 cm− 3 range. Cathodoluminescence spectroscopy is systematically performed in seventeen samples under a 10 kV acceleration voltage at 5 K and the exciton bound to boron (BETO) intensity to the free exciton (FETO) intensity ratio is evaluated (IBETO/IFETO). A linear relationship between IBETO/IFETO and [B] with a coefficient of 3.5 × 1016 cm− 3 is demonstrated for [B] < 3 × 1017 cm− 3 in single crystalline diamond, irrespective of the gas phase composition during growth.
Research highlights► Low compensation ratios are got in diamond epitaxial layers doped at 1016 B/cm3. ► Boron dosimetry in single-crystalline diamond can be performed down to 1014 B/cm3. ► Cathodoluminescence at 5 K is the more sensitive tool for boron dosimetry. ► Cathodoluminescence at 5 K is a non-destructive tool for boron dosimetry.