Article ID Journal Published Year Pages File Type
702615 Diamond and Related Materials 2012 5 Pages PDF
Abstract

The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in wurtzite n-GaN with impurity concentration 1.1 × 1016 cm− 3 ÷ 1.9 × 1018 cm− 3 and in wurtzite p-GaN with impurity concentration 1.9 × 1019 cm− 3 ÷ 2.6 × 1020 cm− 3 are considered. The temperature dependences of electron mobility in the range 15 ÷ 500 K and hole mobility in the range 100 ÷ 1000 K are calculated.

► The charge carrier scattering processes in wurtzite GaN are considered. ► The temperature dependence of the charge carriers mobility is calculated. ► The temperature dependence of the charge carriers Hall factor is calculated.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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