Article ID Journal Published Year Pages File Type
702666 Diamond and Related Materials 2010 4 Pages PDF
Abstract

Diamond with different grain sizes and nanographite films were grown on silicon and diamond substrate using 90 vol.% argon in hydrogen and methane gas mixtures by hot filament chemical vapor deposition method (HFCVD). In current study, the methane volume concentration was varied from 0.125 to 2 vol. % in order to estimate its effect on film morphology. The substrate temperature was varied from 550 to 850 °C by external heating independently of other CVD parameters, in order to estimate the activation energy. Characterization techniques have involved Raman spectroscopy, high resolution X-ray difractometry and scanning electron microscopy. The CHEMKIN computer package has also been used to simulate the experiments. The results obtained here indicate a single mechanism for diamond growth but with a high competition with sp2 phase's growth.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Authors
, , , ,