| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 702671 | Diamond and Related Materials | 2010 | 4 Pages |
Abstract
A p-type diamond Schottky barrier diode (SBD) on homoepitaxial CVD diamond is presented.The technologic steps required to carry out the experimental device are described in this paper. The B-acceptors concentration and the barrier height have been extracted from C–V measurements leading to Ns ∼ 1.2 × 1017 cm− 3 and ΦΒ = 1.8 eV respectively. The current–voltage experimental measurements performed at room temperature have shown high current density in the range of 900 A/cm2. However, the breakdown voltage of the device was limited to 25 V, this low reverse value suggest the presence of a large defect density in the bulk.
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Authors
S. Koné, G. Civrac, H. Schneider, K. Isoird, R. Issaoui, J. Achard, A. Gicquel,