Local boron doping quantification in homoepitaxial diamond structures

The capability of transmission electron microscopy (TEM) using the high angle annular dark field mode (HAADF, also labelled Z-contrast) to quantify boron concentration, in the high doping range between 1019 cm− 3 and 1021 cm− 3, is demonstrated. Thanks to the large relative variation of atomic number Z between carbon and boron, doping concentration maps and profiles are obtained with a nanometer-scale resolution. A novel numerical simulation procedure allows the boron concentration quantification and demonstrates the high sensitivity and spatial resolution of the technique.