| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 702878 | Diamond and Related Materials | 2009 | 4 Pages |
Abstract
Polycrystalline diamond films were deposited on silicon (100) substrate by microwave plasma chemical vapor disposition (MPCVD) using ~ 300 nm thick <001> textured titanium nitride (TiN) films as buffer layer which were prepared by radio-frequency reactive sputtering. The diamond/TiN films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The results show that no apparent change can be observed for the <100> oriented TiN buffer layers after MPCVD even with a negative bias voltage applied onto the substrates.
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Authors
Wei-Chun Chen, Wei-Lin Wang, Rajanish N. Tiwari, Li Chang,