| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 702915 | Diamond and Related Materials | 2009 | 4 Pages |
Abstract
We investigated a field plate structure using Al2O3. A field plate structure for a diamond Schottky barrier diode was fabricated and the electric breakdown properties were tested for electric field concentration and passivation. A Schottky barrier diode terminated using the field plate with a field oxide of Al2O3 showed about three times higher reverse blocking voltage than an unterminated one.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Kazuhiro Ikeda, Hitoshi Umezawa, Natsuo Tatsumi, Kumaresan Ramanujam, Shin-ichi Shikata,