Article ID Journal Published Year Pages File Type
703183 Diamond and Related Materials 2006 5 Pages PDF
Abstract

Using a tractable plasma description, we have studied steady state of microwave plasmas under various operating conditions. Simplicity of the model allows us to carry out calculations with wide range of input parameters under realistic configurations. Model device used in the present simulation is based on the actual reactor for chemical vapor deposition of diamond. It is confirmed that, in spite of the model simplicity, the adopted model can, at least qualitatively, prescribe dependences of electron number density and power density on input microwave power and feed gas pressure. Linear dependence of the growth rate on the gas pressure, which is similar to numerically predicted dependence of the power density, is confirmed experimentally.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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