Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
703216 | Diamond and Related Materials | 2010 | 4 Pages |
Abstract
Using lift-off method, we synthesized large self-standing plasma CVD diamond films on various substrates. Charge carrier transportation in diamond was measured using α particle measurements and TOF methods with a short-pulsed UV laser. The high-quality films were synthesized rapidly. We observed the maximum transit time of holes and electrons shorter than 5 ns. The lift-off method is useful to fabricate the high-quality diamond with excellent drift velocities of the charge carrier. The charge transport characteristics of our diamond films are comparable to those of a commercially available (Element Six Ltd.) electronics grade IIa diamond single crystal.
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Authors
F. Fujita, A. Kakimoto, J.H. Kaneko, N. Tsubouchi, Y. Mokuno, A. Chayahara, K. Sato, Y. Konno, A. Homma, S. Shikata, M. Furusaka,