N-type doping on (001)-oriented diamond

Growth of (001) n-type diamond by phosphorus doping using microwave plasma-enhanced chemical vapor deposition has been achieved. The detailed growth conditions and procedures are described. The doping efficiency is discussed by secondary ion mass spectroscopy (SIMS) and n-type conduction is confirmed using Hall-effect measurement with an AC magnetic field. The crystallinity of (001) n-type diamond is evaluated by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and cathodoluminescence analysis, indicating that the crystalline perfection is relatively fine. The spatial distribution of impurity incorporation is also discussed using a SIMS mapping technique.