Simulations results of some Diamond On Insulator nano-MISFETs

The miniaturisation of the electronic devices pushes the semiconductor physics toward quantum physics. Some thinner SOI devices were studied, reaching from 200 nm to uni-atomic layer of Silicon placed On Oxide. Frequently, the insulator underneath the nanotransistor body serves as a mechanical support.This paper firstly proposes a generalisation of the “silicon on insulator” concept into “semiconductor on insulator”, with the same “SOI” acronym. The investigated device is a “diamond on insulator”, DOI-MISFET with two architectures, having 100 and 1 nm diamond film thicknesses. The simulations reveal a quantum well forming between source and drain when the film thickness decreases at 1 nm. The electrical characteristics preserve the classical shape in the case of 100 nm film thickness and presents special shapes in the case of DOI-MISFET with 1-nm diamond film thickness and a cavity.