Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
703367 | Diamond and Related Materials | 2006 | 4 Pages |
Abstract
We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto,