| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 703396 | Diamond and Related Materials | 2006 | 4 Pages |
Abstract
Carbon nitride thin films were deposited on Si (100) substrates by DC arc plasma jet CVD. CH4 + N2 and graphite + N2 were used as carbon and nitrogen sources. FT-IR analysis revealed the C–N, C=N, C≡N bonds exist in the deposited films. When the graphite + N2 used as the precursor, the maximum deposition rate was about 3.2 μm/min. The maximum N / C composition ratio of deposited film from graphite + N2 was about 0.78, while that of the film deposited from CH4 + N2 was 0.41. These results suggest that the graphite is a suitable carbon source for deposition of carbon nitride thin films.
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Authors
M. Yamazato, A. Higa, T. Oshiro, H. Toyama, T. Maehama, M. Toguchi,