| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 703447 | Diamond and Related Materials | 2008 | 4 Pages |
Abstract
A process of homoepitaxial growth of diamond (111) films by microwave plasma-enhanced chemical vapor deposition has been investigated characterizing areas by ex-situ atomic force microscopy. The evolution of surface morphology during a lateral growth of (111) diamond was visualized utilizing a mesa structure as a marker. Lateral growth forms atomically flat surfaces, which show atomically flat terraces over several hundred nm widths and single bilayer steps of (111) diamond.
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Authors
Norio Tokuda, Hitoshi Umezawa, Sung-Gi Ri, Masahiko Ogura, Kikuo Yamabe, Hideyo Okushi, Satoshi Yamasaki,