Article ID Journal Published Year Pages File Type
703462 Diamond and Related Materials 2008 7 Pages PDF
Abstract

Detonation nanodiamond dispersed on silicon surfaces underwent different H2 MPCVD exposures. The induced changes at the surface have been characterized in situ by XPS and XEELS. Then, a short CH4/H2 growth step was applied. This sequential study revealed an excellent stability of detonation nanodiamond. The sp3 etching rate is insufficient to remove nanodiamond even under intense H2 plasma. The H2 exposure could be successfully used to remove C–C sp2 carbon without altering sp3 seeds. Moreover, the formation of silicon carbide observed after the hydrogen treatment is thought to be helpful to enhance the adhesion of nanodiamond particles on the substrate.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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