| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 703476 | Diamond and Related Materials | 2008 | 4 Pages |
Abstract
Polarized negative muons were used to study the dynamics of non-equilibrium charge carriers in diamond. From the behavior of the muon polarization it is concluded that the acceptor center μB in diamond is formed in the diamagnetic state (with the probability close to unity) and then, by capturing a hole, turns to the paramagnetic state. The hole capture rate by an ionized acceptor center μB− in synthetic diamond was found to depend on temperature as 1/Tα, where α = (1.5–2.5) at T > 80 K.
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Authors
T.N. Mamedov, A.S. Baturin, V.D. Blank, D. Herlach, V.N. Gorelkin, K.I. Gritsaj, M.S. Kuznetsov, S.A. Nosukhin, V.G. Ralchenko, A.V. Stoykov, S.A. Terentiev, V.A. Zhukov, U. Zimmermann,