Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
703516 | Diamond and Related Materials | 2008 | 4 Pages |
Abstract
A thin zinc oxide (ZnO) films with inclined c-axis are deposited on the nucleation side of self-standing diamond substrates with. r.f. magnetron sputtering and a zinc-oxide target. The films are characterized by X-ray diffraction (XRD) with a χ-scan analysis. We have measured a c-axis angle of inclination of 45° in the case of ZnO/Diamond structure. The velocity and the electromechanical coupling coefficient is theoretically determined by the effective piezoelectric permittivity method for three angles of inclination (0°, 45°, 90°). Several SAW devices were developed on the ZnO(45°)/diamond structure.
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Authors
S. Bensmaine, L. Le Brizoual, O. Elmazria, J.J. Fundenberger, M. Belmahi, B. Benyoucef,