| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7050204 | Applied Thermal Engineering | 2013 | 5 Pages |
Abstract
⺠An enhanced packaging structure designed for AlGaN/GaN HEMTs on an Si substrate. ⺠The V-groove copper base is designed on the device periphery surface heat conduction for enhancing Si substrate thermal dissipation. ⺠The proposed device shows a lower thermal resistance and upgrade in thermal conductivity capability. ⺠This work provides useful thermal IR imagery information to aid in designing high efficiency package for GaN HEMTs on Si.
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Authors
Stone Cheng, Po-Chien Chou, Wei-Hua Chieng, E.Y. Chang,