| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7111260 | Diamond and Related Materials | 2016 | 13 Pages |
Abstract
The influence of temperature, pressure and holder geometry on the homoepitaxial single crystalline diamond growth in a microwave-assisted chemical vapor deposition reactor is discussed in detail. Optimized diamond growth conditions were determined for the growth of CVD diamond samples with (100) and (111) crystal faces, showing no internal stress in the material.
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Authors
C.J. Widmann, W. Müller-Sebert, N. Lang, C.E. Nebel,