| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7111382 | Diamond and Related Materials | 2016 | 17 Pages |
Abstract
In this study, investigation of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond (O-/F-diamond) film has been carried out. Both of the O-/F-diamond surfaces have been formed on different areas of one (100) diamond sample by O2 and CF4 plasma. Metals of Au, Pd, and Cu have been evaporated on the diamond surfaces to form Schottky junctions, whose barrier heights on O-/F-diamond have been investigated by X-ray photoelectron spectroscopy technique, the results of which indicate that the barrier heights of the metals on O-diamond are about 1.70Â eV, and those on F-diamond are about 2.30Â eV, respectively.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Fengnan Li, Jingwen Zhang, Xiaoliang Wang, Zhangcheng Liu, Wei Wang, Shuoye Li, Hong-Xing Wang,