Article ID Journal Published Year Pages File Type
7111615 Diamond and Related Materials 2012 6 Pages PDF
Abstract
► Infrared analysis of the effects of Ge at the interface between SiC and Si. ► Infrared statistical mapping of the interface topography. ► Optimization of the growth of 3C-SiC on Si substrate.
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Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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Infrared analysis of the effect of Ge at the interface between 3C-SiC and Si
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