| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7111626 | Diamond and Related Materials | 2012 | 6 Pages |
Abstract
⺠Si3N4 and HfO2 as the field plate dielectrics in the SiC power device. ⺠Si3N4 and HfO2 filed plate enable improvement of reverse blocking performances. ⺠Maximum electric field can be greatly reduced in Si3N4 and HfO2 filed plate dielectric layer. ⺠Sensitivity of breakdown voltage to interface charge is efficiently suppressed.
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Electrical and Electronic Engineering
Authors
Qing-Wen Song, Yu-Ming Zhang, Yi-Men Zhang, Xiao-Yan Tang,