| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7111672 | Diamond and Related Materials | 2012 | 6 Pages |
Abstract
⺠We made a field effect transistor (FET) with graphene and diamondlike carbon (DLC). ⺠A uniform and thin DLC topgate dielectric was deposited directly on graphene. ⺠The FET shows clear ambipolar characteristics, which are specific to graphene.
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Electrical and Electronic Engineering
Authors
Susumu Takabayashi, Shuichi Ogawa, Yuji Takakuwa, Hyun-Chul Kang, Ryota Takahashi, Hirokazu Fukidome, Maki Suemitsu, Tetsuya Suemitsu, Taiichi Otsuji,