| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7111683 | Diamond and Related Materials | 2012 | 6 Pages |
Abstract
⺠New strategies to grow (100) diamond layers using TriMethylBoron (TMB) as doping gas. ⺠Fabrication of (100) low doped diamond with state of art RT mobilities. ⺠Links between growth conditions and boron incorporation into the diamond matrix. ⺠Metal-SC transition in metallic wall reactors using TMB as doping gas.
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Authors
Pierre-Nicolas Volpe, Jean-Charles Arnault, Nicolas Tranchant, Gauthier Chicot, Julien Pernot, François Jomard, Philippe Bergonzo,