| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7111688 | Diamond and Related Materials | 2012 | 5 Pages |
Abstract
⺠Vertically configured nitrogen-incorporated nanodiamond vacuum field emission transistor. ⺠Chemical vapor deposited nanodiamond in conjunction with self-aligned gate technique. ⺠Gate modulated transistor characteristics with a low threshold voltage of 25 V. ⺠High emission current of 160 μA with high voltage gain of 1000 for vacuum electronics application.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
S.H. Hsu, W.P. Kang, A. Wisitsora-at, J.L. Davidson,