Article ID Journal Published Year Pages File Type
7117317 Materials Science in Semiconductor Processing 2018 7 Pages PDF
Abstract
We demonstrate the fabrication and characterization of flexible and transparent photodetector based on conformally grown AgxO/TiO2/ITO layers on polyethylene terephthalate substrate. Initially, the thickness of AgxO and ITO layers were optimized via deposition time to match layers crystallinity with fixed intermediate TiO2 layer, for better optical and electrical properties. The highly transparent (> 70%) and flexible device presents the high-preforming responses over the broadband light. Under UV illumination, it showed a high responsivity (323 mA/W) and detectivity (4.2 × 108 Jones). Similarly, a noise equivalent power of 2.3 × 10−9 W/Hz1/2 is obtained, which confirmed its capability to detect light at nanowatt level. Moreover, mechanical flexibility test was performed for the flexible and transparent AgxO/TiO2/ITO device. It was found that the device is robust to have good optoelectronic performances even after 500 no. of bending cycles. Thus, the utilization of earth abundant metal-oxides can facilitate the flexibility, durability and transparency of next generation optoelectronic devices.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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