Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117877 | Materials Science in Semiconductor Processing | 2018 | 11 Pages |
Abstract
This paper reports recent advances in high-quality 4H-SiC epitaxial growth. The modern 4H-SiC epitaxial reactors, techniques to improve growth rates and large-diameter uniformity and reduce defect densities are discussed. A single-wafer vertical-type epitaxial reactor is newly developed and employed to grow 150Â mm-diameter 4H-SiC epilayers. Using the reactor, high-speed wafer rotation is confirmed effective, both for enhancing growth rates and improving thickness and doping uniformities. Current levels of reducing particle-induced defects, in-grown stacking faults and basal plane dislocations and controlling carrier lifetimes are also reviewed.
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Authors
Hidekazu Tsuchida, Isaho Kamata, Tetsuya Miyazawa, Masahiko Ito, Xuan Zhang, Masahiro Nagano,