Article ID Journal Published Year Pages File Type
7119530 Materials Science in Semiconductor Processing 2014 7 Pages PDF
Abstract
Structural and mechanical properties in rutile (tetragonal) phases of SnO2 and TiO2 are investigated by performing first-principle density functional theory (DFT) calculations. Generalized Gradient Approximation (GGA) potentials of electronic exchange and correlation part parameterized by Perdew-Burke-Ernzerhof (PBE) are used. Second order elastic stiffness constants, bulk modulus, first-derivative of bulk modulus, and pressure behavior of these mechanical properties are studied up to pressure of 10 GPa. Structural properties and elastic constants of SnO2 and TiO2 calculated in this study are compatible with experimental and other available theoretical studies. Electronic band gap energies of these semiconductors are also calculated. As expected, the calculated values by standard DFT calculations are underestimated in comparison to experimental values.
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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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