An accurate and stable humidity sensing characteristic of Si FET-type humidity sensor with MoS2 as a sensing layer by pulse measurement

In this work, we demonstrate the pulse scheme to obtain stable humidity sensing characteristics in Si FET-type humidity sensor using MoS2 film as a sensing layer. To investigate the reaction between H2O molecules and MoS2 film, the transfer characteristics (ID-VCG) and transient drain current behaviors (ID-t) are measured in both pMOSFET and nMOSFET sensors by DC measurement. To verify the effect of the pulse scheme, the pulsed I-V (PIV) and the ID-t are measured as a parameter of relative humidity. The ID drift of the FET-type sensor is effectively eliminated by applying the pulse to the control-gate (CG) of the FET-type humidity sensor.