Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7143956 | Sensors and Actuators B: Chemical | 2016 | 28 Pages |
Abstract
Ultrathin SnS2 nanosheets are synthesized for the first time by a simple ultrasonic method, and then fabricated onto a SiO2/Si substrate to form nanosheet-based phototransistor which exhibits a broad photoresponse from 254 to 980Â nm, dependence of photocurrent on optical power and wavelength, fast-response, and long-term stability. Under illumination of 532-nm light with an optical power of 19.3Â mW/cm2 (0.68Â nW), the photoswitch current ratio (PCR) is about 8.7, while the photoresponsivity, external quantum efficiency, and detectivity are 0.65Â mA/W, 0.15%, and 1.13Â ÃÂ 108Â J, respectively. Compared with the reported SnS2-based photodetectors, the SnS2-nanosheet phototransistor shows an enhanced photosensitive performance.
Related Topics
Physical Sciences and Engineering
Chemistry
Analytical Chemistry
Authors
Jia-Jing Wu, You-Rong Tao, Yi Wu, Xing-Cai Wu,