Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7144857 | Sensors and Actuators B: Chemical | 2016 | 17 Pages |
Abstract
Characterization of ZnO thin films, deposited simultaneously on silicon (Si) planar substrates, was performed using Scanning Electron Microscope, Energy Dispersive X-ray Spectroscopy and X-ray Photoelectron Spectroscopy. The LPFGs with ZnO coatings from 29 to 145Â nm of thickness were characterized and compared in terms of the wavelength shift and the intensity of the attenuation bands changing the surrounding refractive index (SRI) from 1.300 to 1.600. An average wavelength sensitivity of â¼7162Â nm/RIU was achieved in the RI range from 1.440 to 1.456 and more than 12,000Â nm/RIU at 1.440 RI. Using a ZnO film thickness of 116Â nm and in the RI region between 1.320 and 1.360 the average sensitivity of â¼806Â nm/RIU was measured for a 145Â nm thick film. Working as an intensity sensing device, the 87Â nm coated LPFG shows a linear sensitivity of 216.4Â dB/RIU in a wide range of RI from 1.340 to 1.420.
Related Topics
Physical Sciences and Engineering
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Authors
L. Coelho, D. Viegas, J.L. Santos, J.M.M.M. de Almeida,