Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7146285 | Sensors and Actuators B: Chemical | 2015 | 6 Pages |
Abstract
A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H2O2) treatment is fabricated and studied. A 3-nm-thick GaxOy layer formed by an immersion in H2O2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88 mV/pH), a higher current sensitivity (â56.09 μA/pH mm), a lower drift rate (1.41 μA/h mm), an extremely low hysteresis (0.4 mV), and a lower voltage decay rate (â0.14 mV/pH day) after 28 days. Moreover, insignificant interference effects from Na+ and K+ ions were observed. Thus, the studied GaN-based ISFET utilizing an H2O2 treatment promises to fabricate high-performance pH sensing applications.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Analytical Chemistry
Authors
Chun-Chia Chen, Huey-Ing Chen, Hao-Yeh Liu, Po-Cheng Chou, Jian-Kai Liou, Wen-Chau Liu,