Long-term stability of a MEIS low energy hydrogen sensor

A hydrogen sensor based on a silicon Metal/Solid Electrolyte/Insulator/Semiconductor (MEIS) structure with thin layers of the super-ionic conductor LaF3 and Pd gate metal was investigated in a hybrid structure on a resistance heater mounted on a ceramic substrate. The sensor was operated at room temperature, however, a short heating impulse once a day ensures a fast and reproducible dynamic behavior. The sensor was characterized in the concentration range typical for alarm levels up to 40% of the lower flammability limit and shows a logarithmic dependency of the sensor signal from the hydrogen concentration and a mean sensitivity of about 140 mV/decade. The response time (t90) is about 8 s. In a long term test for a period of three month, the sensor was exposed to hydrogen every two weeks. The sensor signal was shown to be stable in dynamic behavior, sensitivity and signal difference.