Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7149342 | Sensors and Actuators B: Chemical | 2013 | 5 Pages |
Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) functionalized with ZnO nanorods were used for sensing CO in the concentration range of 50-500 ppm balanced with air at ambient and temperatures from 25 to 250 °C. An increase of the HEMT drain current was observed for exposure to the CO-containing ambient. The sensing limitation was improved from 100 ppm to 50 ppm by increasing the sensor temperature from room temperature to 250 °C. The sensing response was also enhanced from 0.09% to 0.34% by increasing the sensor temperature. Reliable and repeatable current changes with the introduction of a low CO concentration of 50 ppm and also rapid response times of â¼40 s and recovery times â¼15 s were demonstrated.
Related Topics
Physical Sciences and Engineering
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Authors
Chien-Fong Lo, Yuyin Xi, Lu Liu, Stephen J. Pearton, Sylvain Doré, Chien-Hsing Hsu, Amir M. Dabiran, Peter P. Chow, Fan Ren,