Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150168 | Solid-State Electronics | 2018 | 7 Pages |
Abstract
Avalanche breakdown of novel 650â¯V SiC Schottky-barrier rectifiers is investigated. The rectifier diode has low leakage current for the temperatures up to 300â¯Â°C. Thermal coefficient of avalanche breakdown increases with the temperature to around 0.009%/K at 200â¯Â°C. Near-uniform avalanche breakdown is verified using emission imaging, and maximum specific avalanche energy of 20.7â¯J/cm2 is achieved. The critical temperature for stability in unclamped inductive switching (UIS) is above 520â¯Â°C as estimated through thermal simulation. Long-term walkout of breakdown voltage at 176â¯Â°C is less than 0.02%.
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Authors
A. Konstantinov, H. Pham, B. Lee, K.S. Park, B. Kang, F. Allerstam, T. Neyer,